RF power transistor circuits
US9106187B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2014 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Feb 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/21106
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.