Temperature dependent biasing for leakage power reduction
US9110484B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2013 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Sep 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0054
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Temperature dependent biasing for leakage power reduction. In some embodiments, a semiconductor device may include a biasing circuit configured to generate a voltage that varies dependent upon a temperature of the semiconductor device and a logic circuit operably coupled to the biasing circuit, where the voltage is applied to a bulk terminal of one or more transistors within the logic circuit, and where the voltage has a value outside of a voltage supply range of the logic circuit. In another embodiment, a semiconductor device may include a biasing circuit configured to generate a voltage that varies according to a temperature of the semiconductor device and a power switch operably coupled to the biasing circuit, where the voltage is applied to a gate terminal of the power switch, and where the voltage has a value outside of a voltage supply range of the power switch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.