Three-dimensional semiconductor memory device
US9111617B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2012 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Apr 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device is provided including first and second cell strings formed on a substrate, the first and second cell strings jointly connected to a bit line, wherein each of the first and second cell strings includes a ground selection unit, a memory cell, and first and second string selection units sequentially formed on the substrate to be connected to each other, wherein the ground selection unit is connected to a ground selection line, the memory cell is connected to a word line, the first string selection unit is connected to a first string selection line, and the second string selection unit is connected to a second string selection line, and wherein the second string selection unit of the first cell string has a channel dopant region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.