Floating gate structure with high electrostatic discharge performance

US9111754B2 · kind B2 · utility

Assignee

• Vishay-Siliconix, LLC · US

Inventors

• Esin Kutlu Demirlioglu · Cupertino, US
• Min Luo · Beijing, CN

Key dates

• Filing date: Jan 18, 2007
• Grant date: Aug 18, 2015
• Expiry date: May 25, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

Systems and methods for floating gate structures with high electrostatic discharge performance. In one embodiment, a semiconductor structure includes a floating gate device. The floating gate device includes an embedded diode characterized as having less temperature dependence than a Zener diode. The breakdown voltage of the embedded diode is greater than an operating voltage of an associated integrated circuit and a snapback trigger voltage of the embedded diode is lower than a breakdown voltage of the semiconductor structure.