Semiconductor device and driver circuit with source and isolation structure interconnected through a diode circuit, and method of manufacture thereof

US9111767B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Weize Chen · Phoenix, US
• Hubert M. Bode · Haar, DE
• Richard J. De Souza · Tempe, US
• Patrice M. Parris · Phoenix, US

Key dates

• Filing date: Jun 29, 2012
• Grant date: Aug 18, 2015
• Expiry date: Feb 2, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/155

Abstract

Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within area of the substrate contained by the isolation structure, and a diode circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a source region of the first conductivity type, and the diode circuit is connected between the isolation structure and the source region. The diode circuit may include one or more Schottky diodes and/or PN junction diodes. In further embodiments, the diode circuit may include one or more resistive networks in series and/or parallel with the Schottky and/or PN diode(s).