Forming three dimensional isolation structures
US9111773B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 11, 2014 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Dec 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A three dimensional shallow trench isolation structure including sets of parallel trenches extending in two perpendicular directions may be formed by depositing a conformal deposition in a first set of parallel trenches, oxidizing the second set of trenches to enable selective deposition in said second set of trenches and then conformally depositing in said second set of trenches. In some embodiments, only one wet anneal, one etch back, and one high density plasma chemical vapor deposition step may be used to fill both sets of trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.