Non-volatile memory device
US9111859B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 10, 2013 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Nov 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/34
Abstract
According to an embodiment, a non-volatile memory device includes a first interconnection extending in a first direction, a plurality of second interconnections provided side by side on the first interconnection and extending in a second direction intersecting the first direction and a memory layer provided on a side surface of each second interconnection. The device also includes a control element provided between each of the second interconnections and the first interconnection, an element part extending in the second direction, and a control electrode facing a side surface of the element part via a first insulating film. An adjustment part is provided on the first interconnection and adjacent to a control element connected to a second interconnection disposed at an end position of the second interconnections arranged in the first direction, and a first outer electrode provided between the adjustment part and the control element disposed at the end position.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.