Non-volatile memory device with TSI/TSV application
US9111941B2 · kind B2 · utility
3Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 2013 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | May 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Memory devices and methods for forming the device are disclosed. The device includes a substrate having an array surface and a non-array surface and a memory array having a plurality of memory cells interconnected by first conductors in a first direction and second conductors in a second direction. The memory array is disposed on the array surface of the substrate. The device further includes through silicon via (TSV) contacts disposed in the substrate. The TSV contacts extend from the array surface to the non-array surface, enabling electrical connections to the array from the non-array surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.