Patent · US Active

Semiconductor device

US9111951B2 · kind B2 · utility

1Cited by
3References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 4, 2014
Grant dateAug 18, 2015
Priority date
Expiry dateFeb 4, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/05647
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Provided is a semiconductor device configured to prevent a penetration of moisture into an internal circuit. The moisture from a bonding pad to the internal circuit is blocked by providing an underlying polysilicon film (10) formed as a lower layer of a bonding pad, a bonding pad (1) formed above the underlying polysilicon film (10) through intermediation of an inter-layer insulation film (21), and an outer circumferential interconnecting line (3) formed so as to surround an outer side of the bonding pad 1, and by connecting the outer circumferential interconnecting line (3) and the underlying polysilicon film (10) with a continuous outer circumferential contact.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.