Semiconductor device and manufacture method thereof
US9111959B2 · kind B2 · utility
1Cited by
3References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 20, 2013 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Dec 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
Abstract
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a well region disposed in a substrate, a gate disposed on the substrate, a halo region disposed in a channel region under the gate, and a source LDD region and a drain LDD region disposed on opposite sides of the halo region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.