Yon Sup Pang
12Patents
4h-index
9Co-inventors
49Inventor score
Filing activity: Nov 16, 2010 → Jul 25, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9666700B2 | Vertical bipolar junction transistor and manufacturing method thereof | Electricity | 7 | Active |
| US10586863B2 | Low-cost semiconductor device manufacturing method | Electricity | 4 | Active |
| US10566465B2 | Semiconductor device comprising Schottky barrier diodes | Electricity | 4 | Active |
| US9705010B2 | Schottky diode having floating guard rings | Electricity | 4 | Active |
| US9691893B2 | Low-cost semiconductor device manufacturing method | Electricity | 4 | Active |
| US10923603B2 | Semiconductor device comprising Schottky barrier diodes | Electricity | 3 | Active |
| US8674442B2 | Semiconductor device and manufacturing method thereof | Electricity | 1 | Active |
| US9111959B2 | Semiconductor device and manufacture method thereof | Electricity | 1 | Active |
| US11756992B1 | Semiconductor device with increased isolation breakdown voltage | Electricity | 0 | Active |
| US9105721B2 | Semiconductor device and manufacturing method thereof | Electricity | 0 | Active |
| US12046629B2 | Semiconductor device with increased isolation breakdown voltage | Electricity | 0 | Active |
| US12349452B2 | Bipolar-CMOS-DMOS semiconductor device having a deep trench isolation structure for high isolation breakdown voltage | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.