Semiconductor device and method of manufacturing the same
US9111965B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2013 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Nov 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/123
Abstract
A semiconductor device according to an embodiment includes: first and second semiconductor regions each having a protruded shape provided on a substrate, the first semiconductor region including a first source, a first drain, and a first channel provided between the first source and the first drain and extending in a first direction from the first source to the first drain, the first channel having a first width in a second direction perpendicular to the first direction, and the second semiconductor region including a second source, a second drain, and a second channel provided between the second source and the second drain and extending in a third direction from the second source to the second drain, the second channel having a second width in a fourth direction perpendicular to the third direction that is wider than the first width of the first channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.