Method for improving anti-radiation performance of SOI structure

US9111995B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Yinxue Lv · Beijing, CN
• Jinshun Bi · Beijing, CN
• Jiajun Luo · Hubei, CN
• Zhengsheng Han · Beijing, CN
• Tianchun Ye · Beijing, CN

Key dates

• Filing date: Oct 25, 2012
• Grant date: Aug 18, 2015
• Expiry date: Oct 25, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/7624
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for improving anti-radiation performance of SOI structure that includes implementing particle implantations of high-energy neutrons, protons and γ-rays to a buried oxide layer of an SOI structure, and then performing annealing process. The high-energy particle implantation introduces displacement damage to the buried oxide layer of the SOI structure.