MEMS device and method of forming the same
US9112008B2 · kind B2 · utility
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2References
8Claims
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Key dates
| Filing date | Jan 26, 2011 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Jun 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MEMS device and a forming method thereof are provided. The MEMS device includes a semiconductor substrate with a well region formed therein. A source region, a drain region and a channel region are formed in the well region. The source region and the drain region are covered by an isolating layer, and the channel region is covered by a gate dielectric layer. The device further includes a gate electrode layer which is disposed above the gate dielectric layer, with a gap disposed therebetween. The width of the gap corresponds to the width of the channel region. The MEMS can work well at high voltages with less leakage current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.