Source/drain structure of semiconductor device
US9112033B2 · kind B2 · utility
8Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2013 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Dec 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to a semiconductor device having an isolation structure with a top surface over a substrate major surface; a cavity having a convex bottom surface below the top surface; and a strained material in the cavity and extending above the top surface. The strained material has an upper portion having a rhombus shape and a lower portion having substantially vertical sidewalls; and a pair of tapered spacers adjoining a portion of the substantially vertical sidewalls above the top surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.