Inventor · Taipei, TW

Wei-Yang Lee

193Patents
9h-index
100Co-inventors
79Inventor score

Filing activity: Jun 19, 2008 → Jun 17, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US8334198B2 Method of fabricating a plurality of gate structures Electricity 44 Active
US9287403B1 FinFET and method for manufacturing the same Electricity 26 Active
US10522642B2 Semiconductor device with air-spacer Electricity 23 Active
US9293534B2 Formation of dislocations in source and drain regions of FinFET devices Electricity 20 Active
US10868181B2 Semiconductor structure with blocking layer and method for forming the same Electricity 14 Active
US9570556B1 Semiconductor device and manufacturing method thereof Emerging Cross-Sectional Technologies 14 Active
US8008143B2 Method to form a semiconductor device having gate dielectric layers of varying thicknesses Electricity 13 Active
US8334197B2 Method of fabricating high-k/metal gate device Electricity 10 Active
US9768256B2 Formation of dislocations in source and drain regions of FinFET devices Electricity 10 Active
US10153344B2 Formation of dislocations in source and drain regions of FinFET devices Electricity 9 Active
US9129988B1 FinFET and method of manufacturing the same Electricity 9 Active
US9029912B2 Semiconductor substructure having elevated strain material-sidewall interface and method of making the same Electricity 8 Active
US9112033B2 Source/drain structure of semiconductor device Electricity 8 Active
US9748389B1 Method for semiconductor device fabrication with improved source drain epitaxy Electricity 8 Active
US8283222B2 Method to form a semiconductor device having gate dielectric layers of varying thickness Electricity 7 Active
US10158000B2 Low-K dielectric sidewall spacer treatment Electricity 7 Active
US10217815B1 Integrated circuit device with source/drain barrier Electricity 6 Active
US9812576B2 Semiconductor device and manufacturing method thereof Emerging Cross-Sectional Technologies 6 Active
US7671640B2 Direct injection-locked frequency divider circuit with inductive-coupling feedback architecture Electricity 4 Active
US9865504B2 Semiconductor device and manufacturing method thereof Electricity 4 Active
US10403551B2 Source/drain features with an etch stop layer Electricity 3 Active
US11631746B2 Semiconductor device and method of manufacture Electricity 3 Active
US11189706B2 FinFET structure with airgap and method of forming the same Electricity 3 Active
US10396156B2 Method for FinFET LDD doping Electricity 3 Active
US10134902B2 PMOS FinFET Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.