Semiconductor substrate, field-effect transistor, integrated circuit, and method for fabricating semiconductor substrate
US9112035B2 · kind B2 · utility
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8References
10Claims
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Key dates
| Filing date | Mar 2, 2012 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Mar 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate includes a substrate, an insulating layer, and a semiconductor layer. The insulating layer is over and in contact with the substrate. The insulating layer includes at least one of an amorphous metal oxide and an amorphous metal nitride. The semiconductor layer is over and in contact with the insulating layer. The semiconductor layer is formed by crystal growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.