Semiconductor device and method of fabricating the same
US9112137B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2012 |
| Grant date | Aug 18, 2015 |
| Priority date | — |
| Expiry date | Mar 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
Abstract
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.