RRAM cell structure with laterally offset BEVA/TEVA

US9112148B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chih-Yang Chang · 員林市, TW
• Wen-Ting Chu
• Kuo-Chi Tu · Baoshan, TW
• Yu-Wen Liao · New Taipei, TW
• Hsia-Wei Chen · Taipei, TW
• Chin-Chieh Yang · New Taipei, TW
• Sheng-Hung Shih · Hsinchu, TW
• Wen-Chun You · Zilongting, TW

Key dates

• Filing date: Sep 30, 2013
• Grant date: Aug 18, 2015
• Expiry date: Sep 30, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8845

Abstract

The present disclosure relates to a resistive random access memory (RRAM) cell architecture, with off-axis or laterally offset top electrode via (TEVA) and bottom electrode via (BEVA). Traditional RRAM cells having a TEVA and BEVA that are on-axis can cause high contact resistance variations. The off-axis TEVA and BEVA in the current disclosure pushes the TEVA away from the insulating layer over the RRAM cell, which can improve the contact resistance variations. The present disclosure also relates to a memory device having a rectangular shaped RRAM cell having a larger area that can lower the forming voltage and improve data retention.