Nonvolatile semiconductor memory device with a write sequence including a setting and removing operation
US9117522B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 24, 2013 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Oct 24, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/73
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device according to an embodiment comprises: a memory cell array including a plurality of memory cells provided one at each of intersections of a plurality of first lines and a plurality of second lines and each storing data by a data storing state of a filament; and a control circuit configured to execute a write sequence that writes data to the memory cell, the write sequence including: a setting operation that applies a setting pulse having a first polarity to the memory cell; and a removing operation that applies a removing pulse having a second polarity opposite to the first polarity to the memory cell; and the control circuit, during execution of the write sequence, is configured to repeatedly execute the setting operation until the memory cell attains a desired data storing state, and then to execute the removing operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.