Method for in-situ dry cleaning, passivation and functionalization of Ge semiconductor surfaces
US9117653B2 · kind B2 · utility
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Key dates
| Filing date | Oct 24, 2013 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Dec 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for in-situ dry cleaning of a Ge containing semiconductor surface, other than SiGe. The method is conducted in a vacuum chamber. An oxygen monolayer(s) is formed and promotes removal of essentially all carbon from the surface, and serves to both clean and functionalize the surface. The Ge semiconductor surface is then annealed at a temperature below that which would induce dopant diffusion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.