Semiconductor device and structure
US9117749B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, including: a first transistor sharing a first diffusion with a second transistor; a third transistor sharing a second diffusion with the second transistor; and at least one programmable resistor; wherein the at least one programmable resistor is connected to the first diffusion and the second diffusion, wherein the at least one programmable resistor includes one of the following: memristor, transition metal oxides, polymeric memristor, ferroelectric memristor, spintronic memristor, spin transfer torque, phase-change structure, programmable metallization structure, conductive-bridging structure, magnetoresistive structure, chalcogenide structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.