Insulation material for integrated circuits and use of said integrated circuits

US9117771B2 · kind B2 · utility

Assignees

• Leibniz-Institut für Festkörper- und, Werkstoffforschung Dresden e. V. · DE
• GlobalFoundries Inc. · KY

Inventors

• Gotthart Seifert · Dresden, DE
• Helmut Hermann · Bochum, DE
• Konstyantyn Zagorodniy · Cologne, DE
• Ehrenfried Zschech · Radebeul, DE

Key dates

• Filing date: Feb 3, 2010
• Grant date: Aug 25, 2015
• Expiry date: Jun 30, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02175
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to the fields of microelectronics and materials sciences and concerns an insulation layer material for integrated circuits in microelectronics, which can be used, for example, in integrated circuits as insulation material in semiconductor components. The object of the present invention is to disclose an insulation material for integrated circuits, which has dielectric constants of k≦2 with good mechanical properties at the same time. The object is attained with an insulation material for integrated circuits, containing at least MOFs and/or COFs.