Thin film transistor, method of fabricating the same and organic light emitting diode display device including the same
US9117798B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2010 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Mar 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.