Production of laterally diffused oxide semiconductor (LDMOS) device and a bipolar junction transistor (BJT) device using a semiconductor process
US9117845B2 · kind B2 · utility
6Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Jan 25, 2013 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Jan 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one general aspect, a method can include implanting a first dopant, simultaneously, in a portion of a laterally diffused metal oxide semiconductor (LDMOS) device and in a portion of a resistor device included in a semiconductor device. The method can also include implanting a second dopant, simultaneously, in a portion of the LDMOS device and in a portion of a bipolar junction transistor (BJT) device in the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.