Christopher Nassar
9Patents
3h-index
22Co-inventors
49Inventor score
Filing activity: Oct 31, 2012 → Jun 29, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10269932B1 | Asymmetric formation of epi semiconductor material in source/drain regions of FinFET devices | Electricity | 30 | Active |
| US9117845B2 | Production of laterally diffused oxide semiconductor (LDMOS) device and a bipolar junction transistor (BJT) device using a semiconductor process | Electricity | 6 | Active |
| US8878275B2 | LDMOS device with double-sloped field plate | Electricity | 5 | Active |
| US10418455B2 | Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device | Electricity | 1 | Active |
| US10991796B2 | Source/drain contact depth control | Electricity | 1 | Active |
| US8987107B2 | Production of high-performance passive devices using existing operations of a semiconductor process | Electricity | 1 | Active |
| US9112346B2 | Input power protection | Electricity | 1 | Active |
| US10522639B2 | Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device | Electricity | 0 | Active |
| US8822296B2 | Use of plate oxide layers to increase bulk oxide thickness in semiconductor devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.