Techniques for treating sidewalls of patterned structures using angled ion treatment
US9118001B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2013 |
| Grant date | Aug 25, 2015 |
| Priority date | — |
| Expiry date | Jul 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32131
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In one embodiment a method of method of treating a sidewall layer of a patterned feature includes providing the patterned feature as an etched structure comprising one or more layers disposed on a substrate and generally parallel to a plane of the substrate defined by a front surface of the substrate. The sidewall layer comprises material from the one or more etched layers. The method further includes arranging the substrate proximate a sheath modifier that is adjacent a plasma, and providing ions in an ion dose to the substrate by extracting the ions from the plasma through the sheath modifier, the ions impinging upon the substrate at an angle with respect to a perpendicular to the plane of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.