Polylactide/silicon-containing block copolymers for nanolithography
US9120117B2 · kind B2 · utility
2Cited by
1References
7Claims
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Key dates
| Filing date | Feb 7, 2013 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Feb 13, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31504
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A diblock copolymer system that self-assembles at very low molecular weights to form very small features is described. One polymer in the block copolymer contains silicon, and the other polymer is a polylactide. The block copolymer may be synthesized by a combination of anionic and ring opening polymerization reactions. This block copolymer may form nanoporous materials that can be used as etch masks in lithographic patterning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.