Method and apparatus for performing optical proximity and photomask correction
US9122160B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02T10/82
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An approach is provided for enabling simulation of photomask contour shapes, performing verification on the simulated photomask shapes, and correcting errors in OPC correction or bad fracturing methods to perform photomask proximity correction in real time before physically writing of the photomask. Embodiments include performing optical proximity correction of a photomask of a semiconductor layout to generate a corrected photomask, simulating the corrected photomask to generate one or more simulated contour shapes within a simulated photomask, verifying the simulated contour shapes to determine errors associated with the simulated photomask, and correcting the errors in the simulated contour shapes of the simulated photomask to generate a final photomask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.