Patent · US Active

Lithography method and device

US9122168B2 · kind B2 · utility

0Cited by
4References
18Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMay 12, 2014
Grant dateSep 1, 2015
Priority date—
Expiry dateMay 12, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/0338
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Lithography methods and devices are shown that include a semiconductor structure such as a mask. Methods and devices are shown that include a pattern of mask features and a composite feature. Selected mask features include doubled mask features. Methods and devices shown may provide varied feature sizes (including sub-resolution) with a small number of processing steps.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.