Non-volatile memory array and method of using same for fractional word programming
US9123401B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2012 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Jul 12, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device that includes N planes of non-volatile memory cells (where N is an integer greater than 1). Each plane of non-volatile memory cells includes a plurality of memory cells configured in rows and columns. Each of the N planes includes gate lines that extend across the rows of the memory cells therein but do not extend to others of the N planes of non-volatile memory cells. A controller is configured to divide each of a plurality of words of data into N fractional-words, and program each of the N fractional-words of each word of data into a different one of the N planes of non-volatile memory cells. The controller uses a programming current and a program time period for the programming, and can be configured to vary the programming current by a factor and inversely vary the program time period by the factor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.