Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus
US9123530B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2012 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Mar 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source containing the specific element and a halogen-group to the substrate in a processing chamber, and supplying a second source containing the specific element and an amino-group to the substrate in the processing chamber; and forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, and an oxygen-containing gas and a hydrogen-containing gas to the substrate in the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.