Highly etch-resistant polymer block for use in block copolymers for directed self-assembly
US9123541B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2014 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Apr 1, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08F2438/03
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Compositions for directed self-assembly (DSA) patterning techniques are provided. Methods for directed self-assembly are also provided in which a DSA composition comprising a block copolymer is applied to a substrate and then self-assembled to form the desired pattern. The block copolymer includes at least two blocks of differing etch rates, so that one block (e.g., polymethylmethacrylate) is selectively removed during etching. Because the slower etching block (e.g., polystyrene) is modified with an additive to further slow the etch rate of that block, more of the slow etching block remains behind to fully transfer the pattern to underlying layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.