Plasma etching method
US9123542B2 · kind B2 · utility
3Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2012 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Aug 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etching method forms a tapered recess portion in a wide-gap semiconductor substrate. The method includes forming on the substrate K an etching film having an etching speed higher than that of the substrate K, and forming a mask M having an opening on the high-speed etching film. The substrate K with the etching film and the mask is then placed on a platen and heated to a temperature equal to or higher than 200 ° C., a plasma is generated from an etching gas supplied into a processing chamber, and a bias potential is applied to the platen to etch substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.