Semiconductor device and manufacturing method thereof
US9123543B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2011 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Feb 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of manufacturing the same are provided. The semiconductor device comprises a semiconductor die including a bond pad, a redistribution layer, and a solder ball. The redistribution layer is formed by sequentially plating copper and nickel, sequentially plating nickel and copper, or sequentially plating copper, nickel, and copper. The redistribution layer includes a nickel layer in order to prevent a crack from occurring in a copper layer. Further, a projection is formed in an area of the redistribution layer or a dielectric layer to which the solder ball is welded and corresponds, so that an area of the redistribution layer to which the solder ball is welded increases, thereby increasing bonding power between the solder ball and the redistribution layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.