Patent · US Active

Semiconductor devices using air spaces to separate conductive structures and methods of manufacturing the same

US9123550B2 · kind B2 · utility

7Cited by
2References
19Claims
0Family size

Assignee

Inventor

Key dates

Filing dateSep 6, 2013
Grant dateSep 1, 2015
Priority date
Expiry dateSep 6, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76897
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a substrate, a conductive pattern (e.g., a contact plug) on an active region of the substrate and having respective first and second sidewalls on opposite first and second sides of the conductive pattern, and first and second conductive lines (e.g., bit lines) on the substrate on respective ones of the first and second sides of conductive pattern and separated from the respective first and second sidewalls by asymmetric first and second air spaces.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.