Semiconductor devices using air spaces to separate conductive structures and methods of manufacturing the same
US9123550B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 6, 2013 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Sep 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a conductive pattern (e.g., a contact plug) on an active region of the substrate and having respective first and second sidewalls on opposite first and second sides of the conductive pattern, and first and second conductive lines (e.g., bit lines) on the substrate on respective ones of the first and second sides of conductive pattern and separated from the respective first and second sidewalls by asymmetric first and second air spaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.