Complementary metal-oxide-semiconductor device comprising silicon and germanium and method for manufacturing thereof

US9123566B2 · kind B2 · utility

Assignee

• IMEC · BE

Inventors

• Jerome Mitard · Bossut-Gottechain, BE
• Liesbeth Witters · Linden, BE

Key dates

• Filing date: Jul 3, 2013
• Grant date: Sep 1, 2015
• Expiry date: Jul 3, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

Disclosed are complementary metal-oxide-semiconductor (CMOS) devices and methods of manufacturing such CMOS devices. In some embodiments, an example CMOS device may include a substrate, and a buffer layer formed on the substrate, where the buffer layer comprises Si1-xGex, where x is less than 0.5. The example CMOS device may further include one or more pMOS channel layer elements, where each pMOS channel layer element comprises Si1-yGey, and where y is greater than x. The example CMOS device may still further include one or more nMOS channel layer elements, where each nMOS channel layer element comprises Si1-zGez, and where z is less than x. In some embodiments, the example CMOS device may be a fin field-effect transistor (FinFET) CMOS device and may further include a first fin structure including the pMOS channel layer element(s) and a second fin structure including the nMOS channel layer element(s).