Semiconductor device and method for manufacturing the same
US9123576B2 · kind B2 · utility
1Cited by
0References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 17, 2012 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Apr 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method for manufacturing the same are disclosed, which can improve device characteristics by increasing a process margin between an active region and a storage node contact. The semiconductor device includes an active region, a device isolation film formed to have a lower height than the active region, and exposing an upper part of the active region, and a barrier pattern formed at a sidewall of the exposed active region of an upper part of the device isolation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.