Atomic layer deposition of high performance anti reflection coatings on delta-doped CCDs
US9123622B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2014 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Feb 21, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a region of a silicon oxide surface that is left uncovered, while deposition is inhibited in another region by a contact shadow mask. The Al2O3 layer is an antireflection coating. In addition, the Al2O3 layer can also provide a chemically resistant separation layer between the silicon oxide surface and additional antireflection coating layers. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar antireflection properties and chemical protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.