Multi-level autolimitating etching method
US9123652B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 25, 2014 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Feb 25, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/546
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing patterns includes inclined flanks from a face of a substrate. A protective mask is formed covering at least two masked areas of the face of the substrate and defining at least one intermediate space. An inclined flank is plasma etched from each masked area, wherein the etching forms continuous passivation layer on the inclined flanks producing autolimitation of the etching when the inclined flanks join each other. The etching is carried out in a chamber and includes the introduction into the chamber of a gas additional to the plasma. The additional gas includes molecules of a chemical species participating in the formation of the passivation layer, the quantity of gas in the chamber being controlled so that the chamber contains a quantity of molecules of the species sufficient to form the passivation layer continuously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.