Inventor · White Plains, NY, US

Maxime Darnon

20Patents
5h-index
35Co-inventors
61Inventor score

Filing activity: Jun 12, 2009 → Oct 15, 2015

Most-cited inventions

PatentTitleAreaCited byStatus
US8241992B2 Method for air gap interconnect integration using photo-patternable low k material Electricity 401 Active
US7790601B1 Forming interconnects with air gaps Electricity 18 Active
US9123652B2 Multi-level autolimitating etching method Emerging Cross-Sectional Technologies 14 Active
US8642252B2 Methods for fabrication of an air gap-containing interconnect structure Electricity 11 Active
US7939446B1 Process for reversing tone of patterns on integerated circuit and structural process for nanoscale fabrication Electricity 9 Active
US8896120B2 Structures and methods for air gap integration Electricity 4 Active
US8828749B2 Methodology for evaluation of electrical characteristics of carbon nanotubes Electricity 4 Active
US8952539B2 Methods for fabrication of an air gap-containing interconnect structure Electricity 3 Active
US10056266B2 Method for manufacturing a resistive device for a memory or logic circuit Electricity 3 Active
US8546263B2 Method of patterning of magnetic tunnel junctions Electricity 3 Active
US8183694B2 Reversing tone of patterns on integrated circuit and nanoscale fabrication Electricity 3 Active
US8956886B2 Embedded test structure for trimming process control Electricity 2 Active
US9059249B2 Interconnect structures containing a photo-patternable low-k dielectric with a curved sidewall surface Electricity 2 Active
US8853856B2 Methodology for evaluation of electrical characteristics of carbon nanotubes Electricity 2 Active
US8475667B2 Method of patterning photosensitive material on a substrate containing a latent acid generator Emerging Cross-Sectional Technologies 1 Active
US10319870B2 Photovoltaic module with a controllable infrared protection layer Emerging Cross-Sectional Technologies 1 Active
US8298937B2 Interconnect structure fabricated without dry plasma etch processing Electricity 0 Active
US8629561B2 Air gap-containing interconnect structure having photo-patternable low k material Electricity 0 Active
US8449781B2 Selective etch back process for carbon nanotubes intergration Emerging Cross-Sectional Technologies 0 Active
US8637395B2 Methods for photo-patternable low-k (PPLK) integration with curing after pattern transfer Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.