High electron mobility transistors and methods of manufacturing the same
US9123740B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2012 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Sep 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
Abstract
According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer and a channel layer. The channel layer may include an effective channel region and a high resistivity region. The effective channel region may be between the high resistivity region and the channel supply layer. The high resistivity region may be a region into which impurities are ion-implanted. According to example embodiments, a method of forming a HEMT includes forming a device unit, including a channel layer and a channel supply layer, on a first substrate; adhering a second substrate to the device unit; removing the first substrate; and forming a high resistivity region by ion-implanting impurities into at least a portion of the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.