Manufacturing method for semiconductor device
US9123830B2 · kind B2 · utility
12Cited by
2References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2012 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Nov 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a semiconductor device that has a plurality of semiconductor components and a plurality of resin layers, the method including: a step in which resin layers and semiconductor components are laminated alternately on a substrate, and the same is adhered by being subjected to heating and pressurization at a temperature lower than the temperature at which the substrate and/or a solder layer of the semiconductor components melts; and a step in which heat and pressure are applied at a temperature at which the solder layer melts or a temperature higher than said temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.