Magnetoresistive element and method of manufacturing the same
US9123879B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Mar 10, 2014 |
| Grant date | Sep 1, 2015 |
| Priority date | — |
| Expiry date | Mar 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/20
Abstract
According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.