Choon Kun Ryu
13Patents
6h-index
26Co-inventors
66Inventor score
Filing activity: Oct 23, 1992 → Jul 23, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5908672A | Method and apparatus for depositing a planarized passivation layer | Emerging Cross-Sectional Technologies | 555 | Expired |
| US7211524B2 | Method of forming insulating layer in semiconductor device | Electricity | 503 | Expired |
| US5990000A | Method and apparatus for improving gap-fill capability using chemical and physical etchbacks | Electricity | 257 | Expired |
| US6190233A | Method and apparatus for improving gap-fill capability using chemical and physical etchbacks | Electricity | 252 | Expired |
| US5344676A | Method and apparatus for producing nanodrops and nanoparticles and thin film deposits therefrom | Performing Operations; Transporting | 95 | Expired |
| US9385304B2 | Magnetic memory and method of manufacturing the same | Electricity | 11 | Active |
| US8252686B2 | Method for forming copper wiring in a semiconductor device | Electricity | 2 | Active |
| US9123879B2 | Magnetoresistive element and method of manufacturing the same | Electricity | 2 | Active |
| US7205242B2 | Method for forming isolation layer in semiconductor device | Electricity | 2 | Expired |
| US9406871B2 | Magnetoresistive element and method of manufacturing the same | Electricity | 1 | Active |
| US7183173B2 | Method for forming isolation film in semiconductor device | Electricity | 0 | Expired |
| US6737349B2 | Method of forming a copper wiring in a semiconductor device | Electricity | 0 | Expired |
| US7022624B2 | Semiconductor device and method of fabricating the same | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.