Method of forming a pattern
US9128384B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2012 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | May 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An embodiment of a method of forming a substrate pattern including forming a bottom layer and an overlying middle layer on the substrate. A photo resist pattern is formed on the middle layer. An etch coating layer is deposited on the photo resist pattern. The etch coating layer and the photo resist pattern are used as a masking element to pattern at least one of the middle layer and the bottom layer. The substrate is etched to form the substrate pattern using the at least one of the patterned middle layer and the patterned bottom layer as a masking element. The substrate pattern may be used as an element of an overlay measurement process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.