Systems and methods for providing high voltage to memory devices
US9129686B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2014 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | May 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/0185
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatus, systems, and methods for providing high voltage to memory devices are provided. One apparatus includes a low voltage input and a two-rail level shifting. The two-rail level shifting is configured to increase the low voltage or to decrease the low voltage to an amount that is less than or equal to a ground potential based on the amount of the low voltage. A system includes a low voltage input for receiving a voltage and a two-rail level shifting coupled to the low voltage input. The two-rail level shifting is configured to increase the voltage to a positive voltage if the voltage is equal to a ground potential and decrease the voltage to a negative voltage if the voltage is greater than the ground potential. One method includes receiving a voltage, modifying the voltage to generate one of a plurality of output voltages, and providing the output voltage to a memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.