Ryan T. Hirose
39Patents
14h-index
22Co-inventors
81Inventor score
Filing activity: Aug 11, 1989 → Nov 8, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6163048A | Semiconductor non-volatile memory device having a NAND cell structure | Physics | 360 | Expired |
| US5789776A | Single poly memory cell and array | Electricity | 229 | Expired |
| US6614070B1 | Semiconductor non-volatile memory device having a NAND cell structure | Physics | 99 | Expired |
| US7545694B2 | Sense amplifier with leakage testing and read debug capability | Physics | 89 | Active |
| US6363011B1 | Semiconductor non-volatile latch device including non-volatile elements | Physics | 64 | Expired |
| US5644533A | Flash memory system, and methods of constructing and utilizing same | Electricity | 62 | Expired |
| US5892712A | Semiconductor non-volatile latch device including embedded non-volatile elements | Physics | 52 | Expired |
| US5774400A | Structure and method to prevent over erasure of nonvolatile memory transistors | Physics | 46 | Expired |
| US6122191A | Semiconductor non-volatile device including embedded non-volatile elements | Physics | 41 | Expired |
| US5506816A | Memory cell array having compact word line arrangement | Physics | 38 | Expired |
| US5656837A | Flash memory system, and methods of constructing and utilizing same | Electricity | 35 | Expired |
| US5760644A | Integrated circuit timer function using natural decay of charge stored in a dielectric | Physics | 30 | Expired |
| US5013943A | Single ended sense amplifier with improved data recall for variable bit line current | Physics | 25 | Expired |
| US5510638A | Field shield isolated EPROM | Electricity | 24 | Expired |
| US7969804B1 | Memory architecture having a reference current generator that provides two reference currents | Physics | 14 | Active |
| US6272029A | Dynamic regulation scheme for high speed charge pumps | Physics | 13 | Expired |
| US6178138A | Asynchronously addressable clocked memory device and method of operating same | Physics | 12 | Expired |
| US6590420B1 | Level shifting circuit and method | Electricity | 10 | Expired |
| US8125835B2 | Memory architecture having two independently controlled voltage pumps | Physics | 9 | Active |
| US8542541B2 | Memory architecture having two independently controlled voltage pumps | Physics | 8 | Active |
| US8570809B2 | Flash memory devices and systems | Electricity | 8 | Active |
| US8675405B1 | Method to reduce program disturbs in non-volatile memory cells | Physics | 8 | Active |
| US7821866B1 | Low impedance column multiplexer circuit and method | Physics | 7 | Active |
| US7471135B2 | Multiplexer circuit | Electricity | 5 | Active |
| US6654309B1 | Circuit and method for reducing voltage stress in a memory decoder | Physics | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.