Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applications
US9129800B2 · kind B2 · utility
6Cited by
3References
5Claims
0Family size
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Key dates
| Filing date | Mar 22, 2012 |
| Grant date | Sep 8, 2015 |
| Priority date | — |
| Expiry date | Mar 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for manufacturing a semiconductor on insulator type substrate for radio frequency applications, comprising the following steps in sequence: (a) provision of a silicon substrate with an electrical resistivity of more than 500 Ohm.cm, (b) formation of a polycrystalline silicon layer on the substrate, the method comprising a step between steps a) and b) to form a dielectric material layer, different from a native oxide layer, on the substrate, between 0.5 and 10 nm thick.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.