Patent · US Active

Boron-doped carbon-based hardmask etch processing

US9129911B2 · kind B2 · utility

3Cited by

2References

18Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Kenny L. Doan · San Jose, US
Jong Mun Kim · San Jose, US
Daisuke Shimizu · Saratoga, US

Key dates

Filing date	Jan 30, 2014
Grant date	Sep 8, 2015
Priority date	—
Expiry date	Jan 30, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/32139
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Boron-doped carbon-based hardmask etch processing is described. In an example, a method of patterning a film includes etching a boron-doped amorphous carbon layer with a plasma based on a combination of CH4/N2/O2 and a flourine-rich source such as, but not limited to, CF4, SF6 or C2F6.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.